School of Advanced Engineering Department of Applied Physics HONDA Tohru

Update date：2023/08/31

Professor

HONDA Tohru

1988/03GraduatedScience University of TokyoFaculty of Science and Engineering物理学科
1990/03CompletedTokyo Institute of TechnologyGraduate School, Division of Integrated Science and Engineering物理情報工学専攻Master course
1993/03CompletedTokyo Institute of TechnologyGraduate School, Division of Integrated Science and Engineering物理情報工学専攻Doctor course

2011/09/09Basic and Applied Electron Devices産業図書
2004/01次世代光記録技術と材料シーエムシー出版
1999/06面発光レーザの基礎と応用共立出版
1999/04Properties, Processing and Application of Gallium Nitride and Related Semiconductorsemis DATAREVIEWS SERIES NO. 23, INSPEC publications, The Institution of Electrical Engineers, London, United Kingdom

2023/08/14joint“InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWsNanotechnology
2023/07/13jointSteady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO,Journal of Applied Physics
2023/04/19jointGrowth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor depositionJapanese Journal of Applied Physics
2021/12/02jointVacuum Ultraviolet Emission Properties of Rocksalt- Structured MgZnO Microcrystals Prepared on Quartz Glass SubstratesPhysica Status Solidi (b)
2021/10/10jointMist Chemical Vapor Deposition Growth of alfa-In2O3 Films Using Indium Oxide Powder as Source PrecursorPhysica Status Solidi (b)

2006/11jointCompound-source molecular beam epitaxy of GaN on Si at low temperature using GaN powder and ammonia as sourcesMaterials Research Society 2006 Fall Meeting, Boston MA, USA, 28 November － 1 December 2006, I7.23
2006/10jointFabrication of surface-oxidized GaN crystallites for UV electroluminescent devicesInternational Workshop on Nitride Semiconductors 2006, Kyoto, Japan, 22 － 27 October 2006, WeOD2-1
2006/09jointUV electroluminescent devices fabricated using GaN crystallites13th International Workshop on Inorganic and Organic Electroluminescence & 2006 International Conference on the Science and Technology of Emissive Display and Lightning (EL2006), Jeju, Korea, 18 － 22 September, 2006, P-I-B5
2006/09jointFabrication of GaN-base Electroluminescent devices operating in UV and violet spectral regions13th International Workshop on Inorganic and Organic Electroluminescence & 2006 International Conference on the Science and Technology of Emissive Display and Lightning (EL2006), Jeju, Korea, 18 － 22 September, 2006, P-I-B3
2006/09jointDeposition of GaN films for UV electroluminescent devices by MBE techniqueInternational Conference on Molecular Beam Epitaxy, Tokyo, Japan, 2006, 3 -7 September, MoA3-6

1st International Symposium on Blue Lasers and Light Emitting Diodes Local Committee
2nd International Symposium on Blue Lasers and Light Emitting Diodes Local Committee
2005/09-2006/067th International conference on metal-organic vapor phase epitaxy
2001/08-2004/07電子材料シンポジウム
1999/04-2000/09International workshop on nitride semiconductors

2005/09-2006/09International conference on molecular beam epitaxyprogram committee
2001/09-2002/095th International conference on nitrode semiconductorsSteering committee
1999/04/01-2000/03/31応用物理学会応用物理学会欧文紙編集委員
1996/12/01-2000/12/31Marerials Research SocietyMRS Internet Journal of Nitride Smiconductor, Japan News Coordinator